NJD2873: 2.0 A, 50 V NPN Bipolar Power Transistor

Description: The Bipolar Power Transistor is designed for low v...
  • The Bipolar Power Transistor is designed for low voltage, low power, high gain amplifier applications.
  • Features
  • High DC Current Gain - hfe = 120(min)@Ic = 500 mA
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS Compliant
  • Applications
  • Ideal for high gain amplifier applications.
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NJD2873T4G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 2.0 A, 50 V NPN Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>10K
  • FutureElectronics:>10K
  • Mouser:>1K
  • Newark:<1K
  • PandS:>1K
  • NJVNJD2873T4G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: 2.0 A, 50 V NPN Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Avnet:>100K
  • NJD2873T4
  • Status: Last Shipments
  • Compliance: 
  • Description: 2.0 A, 50 V NPN Bipolar Power Transistor
  • Package Type: DPAK-3
  • Package Case Outline: 369C
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.3 
  • IC Cont. (A):
  • VCEO Min (V): 50 
  • VCBO (V): 50 
  • VEBO (V):
  • VBE(sat) (V): 1.2 
  • VBE(on) (V): 1.2 
  • hFE Min: 120 
  • hFE Max: 360 
  • fT Min (MHz): 65 
  • PTM Max (W): 12.5 
  • Package Type: DPAK-3 
  • ON Semiconductor Full Web Site