NSL12AW: High Current PNP Low VCE(sat) Bipolar Transistor

Description: Low VCE(sat) Bipolar Transistors are mi...
  • Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
  • Features
  • High Current Capability (3 A)
  • High Power Handling (Up to 650 mW)
  • Low VCE(s) (170 mV Typical @ 1 A)
  • Small Size
  • Pb-Free Package is Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NSL12AWT1G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: High Current PNP Low VCE(sat) Bipolar Transistor
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6
  • Package Case Outline: 419B-02
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • ON Semiconductor:21,000
  • NSL12AWT1
  • Status: Last Shipments
  • Compliance: 
  • Description: High Current PNP Low VCE(sat) Bipolar Transistor
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6
  • Package Case Outline: 419B-02
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.29 
  • IC Cont. (A):
  • VCEO Min (V): 12 
  • VCBO (V): 12 
  • VEBO (V):
  • VBE(sat) (V): 0.95 
  • VBE(on) (V): 0.95 
  • hFE Min: 100 
  • hFE Max: 300 
  • fT Min (MHz):
  • PTM Max (W): 0.45 
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6 
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