NSR02F30MX: 200 mA, 30 V, x3DFN 0201 Schottky Barrier Diode

Description: These Schottky barrier diodes are optimized for lo...
  • These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a space saving x3DFN 0201 package ideal for space constraint applications.
  • Features
  • Low Forward Voltage Drop - Reduces Power Dissipation
  • High Switching Speed - Better Performance
  • Low Reverse Current - Reduces Power Dissipation
  • These devices are Pb-free, Halogen free/BFR free and are RoHS compliant
  • Applications
  • LCD and Keypad Backlighting
  • Camera Photo Flash
  • Buck and Boost DC-DC Converters
  • Reverse Voltage and Current Protection
  • End Products
  • Reverse Voltage and Current Protection
  • Mobile Handsets
  • Notebooks, PCs & PDA
  • GPS, MP3 Players
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NSR02F30MXT5G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 200 mA, 30 V, x3DFN 0201 Schottky Barrier Diode
  • Package Type: X3DFN-2
  • Package Case Outline: 152AF
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 10000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • ON Semiconductor:70,000
  • Specifications
  • Configuration: Single 
  • VRRM Min (V): 30 
  • VF Max (V): 0.6 
  • IRM Max (µA): 50 
  • IO(rec) Max (A): 0.2 
  • IFSM Max (A):
  • trr Max (ns):
  • Cj Max (pF):
  • Package Type: X3DFN-2 
  • ON Semiconductor Full Web Site