NSR02L30NXT5G: Schottky Barrier Diode, 200 mA, 30 V

Description: The Schottky diode is optimized for low forward vo...
  • The Schottky diode is optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon no lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100 percent utilization of the package area for active silicon offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
  • Features
  • Very Low Forward Voltage Drop - Reduces Power Disspation
  • Low Reverse Current
  • Very High Switching Speed
  • Applications
  • LCD and Keypad Backlighting
  • Buck and Boost dcdc Converters
  • Reverse Voltage and Current Protection
  • End Products
  • Mobile Handsets
  • Notebook, PCs & PDAs
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NSR02L30NXT5G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Schottky Barrier Diode, 200 mA, 30 V, DSN2 (0201) Schottky Barrier Diode
  • Package Type: DSN-2
  • Package Case Outline: 152AA
  • MSL: 1
  • Container Type: DSFTP
  • Container Qty: 5000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:>10K
  • Newark:>1K
  • ON Semiconductor:140,000
  • Specifications
  • Configuration: Single 
  • VRRM Min (V): 30 
  • VF Max (V): 0.4 
  • IRM Max (µA): 0.2 
  • IO(rec) Max (A): 0.2 
  • IFSM Max (A):
  • trr Max (ns):
  • Cj Max (pF):
  • Package Type: DSN-2 
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