NSR2030DMX: 2A, 30V Schottky Half Bridge

Description: These half bridge Schottky barrier diodes are desi...
  • These half bridge Schottky barrier diodes are designed for the rectification of the high speed signal of wireless charging. The NSR2030DMX has a very low forward voltage that will reduce conduction loss. It is housed in a XDFN 2.0 x 1.35 x 0.4 mm package that is ideal for space constrained wireless applications.
  • Features
  • Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A
  • These Devices are Pb−Free, Halogen Free and are RoHS Compliant
  • Extremely Fast Switching Speed
  • Low Leakage - 5 uA @ VF= 30 V
  • Applications
  • Wireless Charging for Wearables, Portable Electronics and Smartphones - PRU
  • Power Rectification
  • End Products
  • Wearables, Portable Electronics and Smartphones - PRU
  • Technical Documentation & Design Resources
    Availability and Samples
    NSR2030DMXTAG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 2A, 30V Schottky Half Bridge
  • Package Type: XDFN-4
  • Package Case Outline: 711BD
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • ON Semiconductor:6,000
  • Specifications
  • Configuration: Dual 
  • VRRM Min (V): 30 
  • VF Max (V): 0.65 
  • IRM Max (µA): 20 
  • IO(rec) Max (A):
  • IFSM Max (A):
  • trr Max (ns): 25 
  • Cj Max (pF): 76 
  • Package Type: XDFN-4 
  • ON Semiconductor Full Web Site