NSS20601CF8: Low VCE(sat) Transistor, NPN, 20 V, 8.0 A

Description: Low VCE(sat) Bipolar Transistors are mi...
  • Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
  • Features
  • High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta) - Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
  • Applications
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NSS20601CF8T1G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Low VCE(sat) Transistor, NPN, 20 V, 8.0 A
  • Package Type: ChipFET-8
  • Package Case Outline: 1206A-03
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

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  • Packages
    Specifications
  • Polarity: NPN 
  • Type: Low VCE(sat) 
  • VCE(sat) Max (V): 0.065 
  • IC Cont. (A):
  • VCEO Min (V): 20 
  • VCBO (V): 20 
  • VEBO (V):
  • VBE(sat) (V): 0.9 
  • VBE(on) (V): 0.9 
  • hFE Min: 200 
  • hFE Max:
  • fT Min (MHz): 140 
  • PTM Max (W): 1.4 
  • Package Type: ChipFET-8 
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