NSS40301: 3.0 A, 40 V Low VCE(sat) NPN Bipolar Power Transistor

Description: The combination of low saturation voltage and high...
  • The combination of low saturation voltage and high gain makes this Bipolar Power Transistor an ideal device for high speed switching applications where power saving is a concern.
  • Features
  • Low Collector-Emitter Saturation Voltage - Minimized power loss
  • High DC Current Gain - Very low current requirements
  • High Current-Gain Bandwidth Product - Ideal for high frequency designs
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
  • Applications
  • Voltage regulation
  • Power management for portable devices
  • Switching regulator
  • Motor Controls
  • DC-DC converters
  • End Products
  • Battery chargers
  • Portable devices
  • Computing products
  • Automotive instrument clusters
  • Computing products (i.e. motherboards, fan control)
  • Automotive instrument clusters
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NSS40301MZ4T1G
  • Status: Active
  • Compliance: AEC Qualified Pb-free Halide free 
  • Description: 3.0 A, 40 V Low VCE(sat) NPN Bipolar Power Transistor
  • Package Type: SOT-223 (TO-261) 4 LEAD
  • Package Case Outline: 0.0318
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<100
  • Mouser:>1K
  • NSS40301MZ4T3G
  • Status: Active
  • Compliance: AEC Qualified Pb-free Halide free 
  • Description: 3.0 A, 40 V Low VCE(sat) NPN Bipolar Power Transistor
  • Package Type: SOT-223 (TO-261) 4 LEAD
  • Package Case Outline: 0.0318
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 4000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:>1K
  • NSV40301MZ4T1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: 3.0 A, 40 V Low VCE(sat) NPN Bipolar Power Transistor
  • Package Type: SOT-223 (TO-261) 4 LEAD
  • Package Case Outline: 0.0318
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • FutureElectronics:>10K
  • Mouser:>1K
  • ON Semiconductor:228,000
  • NSV40301MZ4T3G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: 3.0 A, 40 V Low VCE(sat) NPN Bipolar Power Transistor
  • Package Type: SOT-223 (TO-261) 4 LEAD
  • Package Case Outline: 0.0318
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 4000
  • Specifications
  • Polarity: NPN 
  • Type: Low VCE(sat) 
  • VCE(sat) Max (V): 0.2 
  • IC Cont. (A):
  • VCEO Min (V): 40 
  • VCBO (V): 40 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V): 0.9 
  • hFE Min: 200 
  • hFE Max: 500 
  • fT Min (MHz): 100 
  • PTM Max (W):
  • Package Type: SOT-223 (TO-261) 4 LEAD 
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