NST847BDP6: Dual NPN Bipolar Transistor

Description: The Dual NPN Bipolar Transistor device is a spin o...
  • The Dual NPN Bipolar Transistor device is a spin off of our popular SOT23, SOT323, SOT563 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six leaded surface mount package. With two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.
  • Features
  • hFE, 200-450
  • Low VCE(sat), <0.25 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • This is a Pb-Free Device
  • NPN General Purpose Transistor
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NST847BDP6T5G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual NPN Bipolar Transistor
  • Package Type: SOT-963
  • Package Case Outline: 527AD
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 8000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • Mouser:>10K
  • ON Semiconductor:496,000
  • PandS:>1K
  • Specifications
  • Polarity: Dual NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.6 
  • IC Cont. (A): 0.1 
  • VCEO Min (V): 45 
  • VCBO (V): 50 
  • VEBO (V):
  • VBE(sat) (V): 0.9 
  • VBE(on) (V): 0.77 
  • hFE Min: 200 
  • hFE Max: 450 
  • fT Min (MHz): 100 
  • PTM Max (W): 0.42 
  • Package Type: SOT-963 
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