NST857BDP6: Dual PNP Bipolar Transistor

Description: The Dual PNP Bipolar Transistor is a spin-off of o...
  • The Dual PNP Bipolar Transistor is a spin-off of our popular SOT23, SOT323, SOT563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.
  • Features
  • hFE, 220-475
  • Low VCE(sat), <0.3 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • This is a Pb-Free Device
  • Applications
  • PNP General Purpose Transistor
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NST857BDP6T5G
  • Status: Active
  • Compliance: AEC Qualified Pb-free Halide free 
  • Description: Dual PNP Bipolar Transistor
  • Package Type: SOT-963
  • Package Case Outline: 527AD
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 8000
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:>100K
  • Mouser:>10K
  • Specifications
  • Polarity: Dual PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.7 
  • IC Cont. (A): 0.1 
  • VCEO Min (V): 45 
  • VCBO (V): 50 
  • VEBO (V):
  • VBE(sat) (V): 0.9 
  • VBE(on) (V): 0.82 
  • hFE Min: 220 
  • hFE Max: 475 
  • fT Min (MHz): 100 
  • PTM Max (W): 420 
  • Package Type: SOT-963 
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