NSVF6001SB6: RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz

Description: This RF transistor is designed for low noise ampli...
  • This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.
  • Features
  • High Current (IC = 100 mA) - Realize a low distorted characteristic
  • Ultra miniature and thin 6 pin package - Superior heat radiation characteristics
  • High Collector Dissipation (800 mW) - Enable movement under the high temperature environment
  • Pb-Free, Halogen Free and RoHS compliance - Environmental consideration
  • AEC-Q101 qualified and PPAP capable - Suitable for automotive applications
  • High Gain : lS21el2 = 11 dB typ (f = 1 GHz)
  • High Cut-off Frequency : fT = 6.7 GHz typ
  • Applications
  • Low Noise Amplifier
  • End Products
  • Automotive Radio Antenna
  • Automotive TV Antenna
  • DAB Antenna
  • Technical Documentation & Design Resources
    Availability and Samples
    NSVF6001SB6T1G
  • Status: Product Preview
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz
  • Package Type: CPH-6
  • Package Case Outline: 318BD
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Packages
    Specifications
  • Polarity: NPN 
  • IC Continuous (A): 0.1 
  • VCEO(sus) Min (V): 12 
  • hFE Min: 90 
  • hFE Max: 180 
  • PTM Max (W): 0.8 
  • fT Min (MHz): 5000 
  • NF Typ. (dB): 1.1 
  • |S21e| 2 Typ. (dB): 11 
  • Package Type: CPH-6 
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