NUS5530MN: Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

Description: This integrated device represents a new level of s...
  • This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
  • Features
  • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive (MOSFET)
  • Performance DFN Package
  • Applications
  • Power Management in Portable and Battery-Powered Products
  • End Products
  • Cellular and Cordless Telephones
  • PCMCIA Cards
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NUS5530MNR2G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
  • Package Type: DFN-8
  • Package Case Outline: 506AL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Mouser:>1K
  • ON Semiconductor:75,000
  • PandS:>1K
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: Low VCE(sat) 
  • VCE(sat) Max (V): 0.1 
  • IC Cont. (A):
  • VCEO Min (V): 35 
  • VCBO (V): 55 
  • VEBO (V):
  • VBE(sat) (V): 0.85 
  • VBE(on) (V): 0.875 
  • hFE Min: 100 
  • hFE Max: 400 
  • fT Min (MHz): 100 
  • PTM Max (W): 2.75 
  • Package Type: DFN-8 
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