NVMFD5C478N: Power MOSFET, Dual N-Channel, 40 V, 27 A, 17.0 mΩ

Description: Automotive Power MOSFET in a 5 x 6 mm flat lead pa...
  • Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
  • Features
  • Low on resistance - Minimal conduction losses
  • High current capability - Robust load performance
  • AEC−Q101 Qualified and PPAP Capable - Suitable for automotive applications
  • NVMFD5C478NWF − Wettable Flanks Product - Enhanced Optical Inspection
  • RoHS Compliant
  • Applications
  • Solenoid driver
  • Low side / high side driver
  • End Products
  • Automotive engine controllers
  • Antilock braking systems
  • Technical Documentation & Design Resources
    Availability and Samples
    NVMFD5C478NT1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: Power MOSFET, Dual N-Channel, 40 V, 27 A, 17.0 mΩ
  • Package Type: SO-8FL Dual / DFN-8
  • Package Case Outline: 506BT
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 1500
  • NVMFD5C478NWFT1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: Power MOSFET, Dual N-Channel, 40 V, 27 A, 17.0 mΩ
  • Package Type: SO-8FL Dual / DFN-8
  • Package Case Outline: 506BT
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 1500
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 40 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 24 
  • PD Max (W): 18 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 14.7 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 350 
  • Package Type: SO-8FL Dual / DFN-8 
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