NVMFS4C302N: Single N−Channel Logic Level Power MOSFET 30 V, 241 A, 1.15 mΩ

Description: Automotive Power MOSFET in a 5x6mm flat lead packa...
  • Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
  • Features
  • Small Footprint (5x6 mm) - Compact Design
  • Low RDS(on) - Minimize Conduction Losses
  • Low QG and Capacitance - Minimize Driver Losses
  • NVMFS4C302NWF − Wettable Flanks Option - Enhanced Optical Inspection
  • AEC−Q101 Qualified and PPAP Capable
  • RoHS Compliant
  • Technical Documentation & Design Resources
    Availability and Samples
    NVMFS4C302NT1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: Single N−Channel Logic Level Power MOSFET 30 V, 241 A, 1.15 mΩ, 30 V, 1.15 mOhm, 225 A, Single N−Channel, Logic Level, SO−8FL
  • Package Type: SO-8FL / DFN-5
  • Package Case Outline: 488AA
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 1500
  • Inventory

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  • ON Semiconductor:15,000
  • NVMFS4C302NWFT1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: Single N−Channel Logic Level Power MOSFET 30 V, 241 A, 1.15 mΩ, 30 V, 1.15 mOhm, 225 A, Single N−Channel, Logic Level, SO−8FL
  • Package Type: SO-8FL / DFN-5
  • Package Case Outline: 488AA
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 1500
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 241 
  • PD Max (W): 115 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):  
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 1.7 
  • RDS(on) Max @ VGS = 10 V (mΩ): 1.15 
  • Qg Typ @ VGS = 4.5 V (nC): 37 
  • Qg Typ @ VGS = 10 V (nC): 82 
  • Ciss Typ (pF): 5780 
  • Package Type: SO-8FL / DFN-5 
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