NXH80T120L2Q0: Power Integrated Module, IGBT, T-Type, 1200 V, 80 A

Description: This high−density, power integrated module (PIM) c...
  • This high−density, power integrated module (PIM) combines high−performance IGBTs with rugged anti−parallel diodes for sine wave inverter applications.
  • Features
  • Short circuit capability
  • High efficiency
  • 1200 V / 80 A T-type module
  • Applications
  • Solar Inverters
  • UPS inverters
  • End Products
  • Solar String Inverters
  • Technical Documentation & Design Resources
    Availability and Samples
    NXH80T120L2Q0SG
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power Integrated Module, IGBT, T-Type, 1200 V, 80 A
  • Package Type: PIM-20 / Q0PACK
  • Package Case Outline: 180AB
  • MSL: NA
  • Container Type: BTRAY
  • Container Qty: 24
  • Specifications
  • Configuration: Single channel T-Type Inverter 
  • IC Max (A): 80 
  • V(BR) Max (V): 1200 
  • VCE(sat) Typ (V): 2.1 
  • VF Typ (V): 2.2 
  • Package Type: PIM-20 / Q0PACK 
  • ON Semiconductor Full Web Site