RFD14N05SM9A: N-Channel Power MOSFET 50V, 14A, 100mΩ

Description: These are N-channel power MOSFETs manufactured usi...
  • These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770.
  • Features
  • 14A, 50V
  • rDS(ON)= 0.100Ω
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175°C Operating Temperature
  • Related Literature
     - TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”
  • Applications
  • Lighting
  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe
  • Technical Documentation & Design Resources
    Availability and Samples
    RFD14N05SM9A
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel Power MOSFET 50V, 14A, 100mΩ
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:>10K
  • Digikey:>10K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 50 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 14 
  • PD Max (W): 48 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 100 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 22 
  • Ciss Typ (pF): 570 
  • Package Type: DPAK-3 / TO-252-3 
  • ON Semiconductor Full Web Site