RFP50N06: N-Channel Power MOSFET 60V, 50A, 22mΩ

Description: These N-Channel power MOSFETs are manufactured usi...
  • These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
    Formerly developmental type TA49018.
  • Features
  • 50A, 60V
  • rDS(ON)= 0.022Ω
  • Temperature Compensating PSPICE® Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • 175°C Operating Temperature
  • Applications
  • Other Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
    RFP50N06
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel Power MOSFET 60V, 50A, 22mΩ
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Avnet:>1K
  • Digikey:<1K
  • Mouser:<1K
  • Newark:<100
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 60 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 50 
  • PD Max (W): 131 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 22 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 67 
  • Ciss Typ (pF): 2020 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site