SGF5N150UF: Discrete, High Performance IGBT

Description: Fairchild’s Insulated Gate Bipolar Transistor (IGB...
  • Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.
  • Features
  • High Speed Switching
  • Low Saturation Voltage : V CE(sat) = 4.7 V @ I C = 5A
  • High Input Impedance
  • Applications
  • Other Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
    SGF5N150UFTU
  • Status: Active
  • Compliance: Pb-free 
  • Description: Discrete, High Performance IGBT
  • Package Type: TO-3PF-3L
  • Package Case Outline: 340AH
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 360
  • Specifications
  • V(BR)CES Typ (V): 1500 
  • IC Max (A): 10 
  • VCE(sat) Typ (V): 4.7 
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode: No 
  • Package Type: TO-3PF-3L 
  • ON Semiconductor Full Web Site