TIP102: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Description: The Darlington Bipolar Power Transistor is designe...
  • The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications. The TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) are complementary devices.
  • Features
  • High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 mAdc
  • Collector-Emitter Sustaining Voltage--@ 30 mAdc
    VCEO(sus) = 60 Vdc (Min)-TIP100, TIP105
    VCEO(sus) = 80 Vdc (Min)-TIP101, TIP106
    VCEO(sus) = 100 Vdc (Min)-TIP102, TIP107
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc
    VCE(sat)= 2.5 Vdc (Max) @ IC= 8.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220 AB Compact Package
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    TIP102G
  • Status: Active
  • Compliance: Pb-free 
  • Description: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Avnet:<1K
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  • Newark:<100
  • Newark:<100
  • TIP102TU
  • Status: Active
  • Compliance: Pb-free 
  • Description: 8.0 A, 100 V NPN Darlington Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Avnet:>1K
  • Digikey:>1K
  • Mouser:>1K
  • Newark:<1K
  • Packages
    Specifications
  • Polarity: NPN 
  • IC Continuous (A):
  • V(BR)CEO Min (V): 100 
  • VCE(sat) Max (V): 2.5 
  • hFE Min (k):
  • hFE Max (k): 20 
  • fT Min (MHz):
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site