TIP32B: PNP Bipolar Power Transistor

Description: The Bipolar Power Transistor is designed for use i...
  • The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. The TIP31, TIP31A, TIP31B, TIP31C, (NPN); and TIP32, TIP32A, TIP32B, TIP32C,(PNP) are complementary devices
  • Features
  • Collector-Emitter Saturation Voltage
    - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
  • Collector-Emitter Sustaining Voltage
    -VCEO(sus) = 60 Vdc (min) - TIP31A, TIP32A
    =80 Vdc (min) - TIP31B, TIP32B
    =100 Vdc (min) - TIP31C, TIP32C
  • High Current Gain Bandwidth Product
    fT = 3.0 MHz (min) @ IC = 500 mAdc
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    TIP32BG
  • Status: Active
  • Compliance: Pb-free 
  • Description: PNP Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:>1K
  • Digikey:>1K
  • Mouser:>1K
  • TIP32BTU
  • Status: Obsolete
  • Compliance: Pb-free 
  • Description: PNP Bipolar Power Transistor
  • Package Type: 
  • Package Case Outline: 
  • MSL: NA
  • Container Type: RAIL
  • Container Qty: 1000
  • TIP32B
  • Status: Obsolete
  • Compliance: 
  • Description: PNP Bipolar Power Transistor
  • Package Type: TO-220-3
  • Package Case Outline: 221A-09
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Packages
    Specifications
  • Polarity: PNP 
  • Type: General Purpose 
  • VCE(sat) Max (V): 1.2 
  • IC Cont. (A):
  • VCEO Min (V): 80 
  • VCBO (V): 80 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V): 1.8 
  • hFE Min: 10 
  • hFE Max: 50 
  • fT Min (MHz):
  • PTM Max (W): 40 
  • Package Type: TO-220-3 
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