TIP33C: High Power NPN Bipolar Power Transistor

Description: The Bipolar Power Transistor is designed for gener...
  • The Bipolar Power Transistor is designed for general-purpose power amplifier and switching applications
  • Features
  • 10 A Collector Current
  • Low Leakage Current - ICEO = 0.7 mA @ 60 V
  • Excellent dc Gain - hFE = 40 Typ @ 3.0 A
  • High Current Gain Bandwidth Product - hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz
  • Pb-Free Packages are Available
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    TIP33CG
  • Status: Active
  • Compliance: Pb-free 
  • Description: High Power NPN Bipolar Power Transistor
  • Package Type: TO-247
  • Package Case Outline: 340L
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Avnet:<1K
  • Digikey:<1K
  • Mouser:<1K
  • Newark:<1K
  • TIP33C
  • Status: Last Shipments
  • Compliance: 
  • Description: High Power NPN Bipolar Power Transistor
  • Package Type: SOT-93-3 / TO-218-3
  • Package Case Outline: 340D-02
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Packages
    Specifications
  • Polarity: NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V):
  • IC Cont. (A): 10 
  • VCEO Min (V): 100 
  • VCBO (V): 100 
  • VEBO (V):
  • VBE(sat) (V):
  • VBE(on) (V):
  • hFE Min: 20 
  • hFE Max: 100 
  • fT Min (MHz):
  • PTM Max (W): 80 
  • Package Type: TO-247 
  • ON Semiconductor Full Web Site