2N7002: N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω
Description: This N-Channel enhancement mode MOSFET is produced...
This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
High density cell design for extremely low RDS(ON).
Voltage controlled small signal switch.
Rugged and Reliable.
High saturation current capability.
This product is general usage and suitable for many different applications.
Small Servo Motor Control
Power MOSFET Gate Drivers
Technical Documentation & Design Resources
Product Change Notification
Availability and Samples
Compliance: Pb-free Halide free
Description: N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 7.5Ω
Package Type: SOT-23-3
Package Case Outline: 318-08
Container Type: REEL
Container Qty: 3000
Market Leadtime (weeks):Contact Factory
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):