2SJ652: P-Channel Power MOSFET, -60V, -28A, 38mΩ

Description: 2SJ652 is a P-Channel Power MOSFET, -60V, -28A, 38...
  • 2SJ652 is a P-Channel Power MOSFET, -60V, -28A, 38mΩ, TO-220F-3SG for General-purpose Swiching Device Application. It features low on-resistance, ultra-high speed switching and 4.0V drive.
  • Features
  • Low on-resistance 28.5mΩ (typ)
  • Input capacitance Ciss = 4360pF (typ)
  • 4.0V drive
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    2SJ652-1E
  • Status: Active
  • Compliance: Pb-free 
  • Description: P-Channel Power MOSFET, -60V, -28A, 38mΩ
  • Package Type: TO-220-3 FullPak
  • Package Case Outline: 221AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 50
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:<1K
  • Newark:<100
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -60 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): -28 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 55.5 
  • RDS(on) Max @ VGS = 10 V (mΩ): 38 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 80 
  • Ciss Typ (pF): 4360 
  • Package Type: TO-220-3 FullPak 
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