AFGB40T65SQDN: IGBT, 650V FS4 High speed version, for OBC application in D2pak

Description: Using the novel field stop 4th generation IGBT tec...
  • Using the novel field stop 4th generation IGBT technology and AEC-Q101 Qualified. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.
  • Features
  • AEC-Q101 qualified - For automotive
  • VCE(sat) = 1.6 V (typ.) @ IC = 40 A - Low conduction loss
  • Low VF soft recovery co-packaged diode - Low noise and conduction loss
  • Applications
  • Automotive On Board Charge
  • Automotive DC/DC converter for HEV
  • End Products
  • EV/PHEV
  • Technical Documentation & Design Resources
    Availability and Samples
    AFGB40T65SQDN
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free 
  • Description: IGBT, 650V FS4 High speed version, for OBC application in D2pak, 650V, 40A, D2PAK
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Newark:<1K
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 40 
  • VCE(sat) Typ (V): 1.6 
  • VF Typ (V): 1.5 
  • Eoff Typ (mJ): 0.229 
  • Eon Typ (mJ): 0.858 
  • Trr Typ (ns): 131 
  • Irr Typ (A):  
  • Gate Charge Typ (nC): 76 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 238 
  • Co-Packaged Diode: Yes 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site