BC848CDW1: Dual NPN Bipolar Transistor

Description: The Dual NPN Bipolar Transistor is designed for ge...
  • The Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications.
  • Features
  • Device Marking:
    BC846BDW1T1 = 1B
    BC847BDW1T1 = 1F
    BC847CDW1T1 = 1G
    BC848BDW1T1 = 1K
    BC848CDW1T1 = 1L
  • Pb-Free Package is Available
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    BC848CDW1T1G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual NPN Bipolar Transistor
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6
  • Package Case Outline: 419B-02
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

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  • NSVBC848CDW1T1G
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: Dual NPN Bipolar Transistor
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6
  • Package Case Outline: 419B-02
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • BC848CDW1T1
  • Status: Last Shipments
  • Compliance: 
  • Description: Dual NPN Bipolar Transistor
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6
  • Package Case Outline: 419B-02
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Packages
    Specifications
  • Polarity: Dual NPN 
  • Type: General Purpose 
  • VCE(sat) Max (V): 0.25 
  • IC Cont. (A): 0.1 
  • VCEO Min (V): 30 
  • VCBO (V): 30 
  • VEBO (V):
  • VBE(sat) (V): 0.7 
  • VBE(on) (V): 0.66 
  • hFE Min: 420 
  • hFE Max: 800 
  • fT Min (MHz): 100 
  • PTM Max (W): 0.38 
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6 
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