BSS123W: N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 0.17A, 6Ω

Description: This N-channel enhancement mode MOSFET is produced...
  • This N-channel enhancement mode MOSFET is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.
  • Features
  • 0.17 A, 100 V
     RDS(ON) = 6 Ω at VGS = 10 V
     RDS(ON) = 10 Ω at VGS = 4.5 V
  • High Density Cell Design for Low RDS(ON)
  • Rugged and Reliable
  • Ultra Small Surface Mount Package
  • Very Low Capacitance
  • Fast Switching Speed
  • RoHS Compliant
  • Applications
  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Logic Level Transistors
  • High Speed Line Drivers
  • Power Management
  • Power Supply and Switching
  • Technical Documentation & Design Resources
    Availability and Samples
    BSS123W
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 0.17A, 6Ω
  • Package Type: SC-70-3 / SOT-323-3
  • Package Case Outline: 419AB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>10K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 0.17 
  • PD Max (W): 0.2 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 10000 
  • RDS(on) Max @ VGS = 10 V (mΩ): 6000 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 1.1 
  • Ciss Typ (pF): 71 
  • Package Type: SC-70-3 / SOT-323-3 
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