EMF5XV6: Complementary Bipolar Digital Transistor (BRT)

Description: This dual die device contains a Low Vce(sat) PNP T...
  • This dual die device contains a Low Vce(sat) PNP Transistor and an electrically isolated NPN Transistor with a Monolithic Bias Resistor Network.
  • Features
  • This is a Pb-Free Device
  • These are Pb-Free Devices
  • Applications
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    EMF5XV6T5
  • Status: Last Shipments
  • Compliance: Pb-free Halide free 
  • Description: Complementary Bipolar Digital Transistor (BRT)
  • Package Type: SOT-563
  • Package Case Outline: 463A-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 8000
  • EMF5XV6T5G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Complementary Bipolar Digital Transistor (BRT)
  • Package Type: SOT-563
  • Package Case Outline: 463A-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 8000
  • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • PandS:>1K
  • Packages
    Specifications
  • Polarity: Dual NPN BRT & PNP TXR 
  • IC Continuous (A): 0.1 
  • V(BR)CEO Min (V): 50 
  • hFE Min: 80 
  • R1 (kΩ): 47 
  • R2 (kΩ): 47 
  • R1/R2 Typ:
  • Vi(off) Max (V):
  • Vi(on) Min (V):
  • Package Type: SOT-563 
  • ON Semiconductor Full Web Site