FCB199N65S3: N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 14 A, 199 mΩ, D2PAK

Description: SUPERFET III MOSFET is ON Semiconductor’s brand−ne...
  • SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
  • Features
  • 700 V @ TJ = 150 oC - Higher system reliability at low temperature operation
  • Ultra Low Gate Charge (Typ. Qg = 30 nC) - Lower switching loss
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF) - Lower switching loss
  • Optimized Capacitance - Lower peak Vds and lower Vgs oscillation
  • Internal Gate resistance: 7.0 ohm - Lower peak Vds and lower Vgs oscillation
  • Typ. RDS(on) = 170 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant
  • Wave soldering guarantee
  • Applications
  • Computing
  • Consumer
  • Industrial
  • End Products
  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV
  • LED Lighting / Ballast
  • Automation
  • Adapter
  • Technical Documentation & Design Resources
    Availability and Samples
    FCB199N65S3
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 14 A, 199 mΩ, D2PAK
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 650 
  • VGS Max (V): ±30 
  • VGS(th) Max (V): 4.5 
  • ID Max (A): 14 
  • PD Max (W): 98 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 199 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 30 
  • Ciss Typ (pF): 1225 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site