FCP170N60: Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-220

Description: SuperFET® II MOSFET is a brand-new high...
  • SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency
  • Features
  • 650 V @TJ = 150°C
  • Typ. RDS(on) = 150 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 42 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • Technical Documentation & Design Resources
    Availability and Samples
    FCP170N60
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-220
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 600 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V): 3.5 
  • ID Max (A): 22 
  • PD Max (W): 227 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 170 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 42 
  • Ciss Typ (pF): 2150 
  • Package Type: TO-220-3 
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