FCP7N60: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220
Description: SuperFET® MOSFET is the first generatio...
SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Features
650V @TJ = 150°C
Typ. RDS(on) = 530mΩ
Ultra low gate charge ( Typ. Qg = 23nC )
Low effective output capacitance ( Typ. Coss.eff = 60pF )
100% avalanche tested
RoHS compliant
Applications
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
FCP7N60
Status: Active
Compliance: Pb-free
Description: Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220
Package Type: TO-220-3
Package Case Outline: 340AT
MSL: NA
Container Type: TUBE
Container Qty: 1000
Specifications
Channel Polarity:
N-Channel 
Configuration:
Single 
V(BR)DSS Min (V):
600 
VGS Max (V):
±30 
VGS(th) Max (V):
5 
ID Max (A):
7 
PD Max (W):
83 
RDS(on) Max @ VGS = 2.5 V (mΩ):
- 
RDS(on) Max @ VGS = 4.5 V (mΩ):
- 
RDS(on) Max @ VGS = 10 V (mΩ):
600 
Qg Typ @ VGS = 4.5 V (nC):
- 
Qg Typ @ VGS = 10 V (nC):
23 
Ciss Typ (pF):
710 
Package Type:
TO-220-3