FCU4300N80Z: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 1.6 A, 4.3 Ω, IPAK

Description: SuperFET® II MOSFET is a brand-new high...
  • SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
  • Features
  • RDS(on) = 3.4 Ω (Typ.)
  • Ultra Low Gate Charge (Typ. Qg = 6.8 nC)
  • Low Eoss (Typ. 0.8 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 36 pF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability
  • Technical Documentation & Design Resources
    Availability and Samples
    FCU4300N80Z
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, SUPERFET® II, 800 V, 1.6 A, 4.3 Ω, IPAK
  • Package Type: IPAK-3 / DPAK-3 STRAIGHT LEAD
  • Package Case Outline: 369AR
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1800
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • ON Semiconductor:7,200
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 800 
  • VGS Max (V): DC: ±20, AC: ±30 
  • VGS(th) Max (V): 4.5 
  • ID Max (A): 1.6 
  • PD Max (W): 27.8 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 4300 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 6.8 
  • Ciss Typ (pF): 267 
  • Package Type: IPAK-3 / DPAK-3 STRAIGHT LEAD 
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