FDB120N10: N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ

Description: This N-Channel MOSFET is produced using a PowerTre...
  • This N-Channel MOSFET is produced using a PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
  • Features
  • RDS(on) = 9.7mΩ ( Typ.) @ VGS = 10V, ID = 74A
  • Fast Switching Speed
  • Low Gate Charge
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant
  • Applications
  • AC-DC Merchant Power Supply
  • AC-DC Merchant Power Supply - Servers & Workstations
  • AC-DC Merchant Power Supply - Desktop PC
  • Other Data Processing
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB120N10
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 4.5 
  • ID Max (A): 74 
  • PD Max (W): 170 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 12 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 66 
  • Ciss Typ (pF): 4215 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site