FDB150N10: N-Channel PowerTrench® MOSFET 100V, 57A, 15mΩ

Description: This N-Channel MOSFET is produced using a PowerTre...
  • This N-Channel MOSFET is produced using a PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
  • Features
  • RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
  • Fast switching speed
  • Low Gate Charge
  • High performance trench technology for extremely low RDS(on)
  • High power and current handling capability
  • RoHS compliant
  • Applications
  • AC-DC Merchant Power Supply
  • AC-DC Merchant Power Supply - Servers & Workstations
  • AC-DC Merchant Power Supply - Desktop PC
  • Technical Documentation & Design Resources
    Availability and Samples
    FDB150N10
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel PowerTrench® MOSFET 100V, 57A, 15mΩ
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • ON Semiconductor:800
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 4.5 
  • ID Max (A): 57 
  • PD Max (W): 110 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 15 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 53 
  • Ciss Typ (pF): 3580 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site