FDC634P: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ

Description: This P-Channel 2.5V specified MOSFET uses a low vo...
  • This P-Channel 2.5V specified MOSFET uses a low voltage PowerTrench® process. It has been optimized for battery power management applications.
  • Features
  • -3.5 A, -20 V
  • RDS(ON) = 80 mΩ @ VGS = -4.5 V
  • RDS(ON) = 110 mΩ @ VGS = -2.5 V
  • Low gate charge (7.2 nC typical)
  • High performance trench technology for extremelylow RDS(ON)
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC634P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V):
  • VGS(th) Max (V): -1.5 
  • ID Max (A): -3.5 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 110 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 80 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 7.2 
  • Ciss Typ (pF): 779 
  • Package Type: TSOT-23-6 
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