FDC638P: P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ

Description: This P-Channel 2.5V specified MOSFET is produced u...
  • This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
  • Features
  • –4.5 A, –20 V.
  • RDS(ON) = 48 mΩ @ VGS = –4.5 V
    RDS(ON) = 65 mΩ @ VGS = –2.5 V
  • Low gate charge (10 nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC638P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V):
  • VGS(th) Max (V): -1.5 
  • ID Max (A): -4.5 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 65 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 48 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 11 
  • Qg Typ @ VGS = 10 V (nC): 10 
  • Ciss Typ (pF): 1160 
  • Package Type: TSOT-23-6 
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