FDC642P: P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ

Description: This P-Channel 2.5V specified MOSFET is produced u...
  • This P-Channel 2.5V specified MOSFET is produced using an PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
  • Features
  • Max rDS(ON) = 65mΩ at VGS = -4.5 V, ID = -4.0A
  • Max rDS(ON) = 100mΩ at VGS = -2.5 V, ID = -3.2A
  • Fast switching speed.
  • Low gate charge (11nC typical).
  • High performance trench technology for extremely low rDS(ON).
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
  • Termination is Lead-free and RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC642P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET, 2.5V Specified -20 V, -4.0 A, 65 mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V):
  • VGS(th) Max (V): -1.5 
  • ID Max (A): -4 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 100 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 65 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 13 
  • Qg Typ @ VGS = 10 V (nC): 11 
  • Ciss Typ (pF): 700 
  • Package Type: TSOT-23-6 
  • ON Semiconductor Full Web Site