FDC653N: N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ

Description: This N-Channel enhancement mode power field effect...
  • This N-Channel enhancement mode power field effect transistors is produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
  • Features
  • 5 A, 30 V
  • RDS(ON) = 0.035 Ω @ VGS = 10 V
  • RDS(ON) = 0.055 Ω @ VGS = 4.5 V
  • Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC653N
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Newark:<100
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A):
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 55 
  • RDS(on) Max @ VGS = 10 V (mΩ): 35 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 12 
  • Ciss Typ (pF): 350 
  • Package Type: TSOT-23-6 
  • ON Semiconductor Full Web Site