FDD18N20LZ: N-Channel Power MOSFET, Logic Level, UniFETTM, 200 V, 16 A, 125 mΩ, DPAK

Description: UniFETTM MOSFET is a high voltage MOSFE...
  • UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
  • Features
  • RDS(on) = 125mΩ ( Max.)@ VGS = 10V, ID = 8A
  • Low gate charge ( Typ. 30nC)
  • Low Crss ( Typ. 25pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDD18N20LZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power MOSFET, Logic Level, UniFETTM, 200 V, 16 A, 125 mΩ, DPAK
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 16 
  • PD Max (W): 89 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 150 
  • RDS(on) Max @ VGS = 10 V (mΩ): 125 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 30 
  • Ciss Typ (pF): 1185 
  • Package Type: DPAK-3 / TO-252-3 
  • ON Semiconductor Full Web Site