FDD3672_F085: N-Channel MOSFET, UltraFET® Trench, 100V, 44A, 28mΩ

Description: N-Channel MOSFET, UltraFET® Trench, 100...
  • N-Channel MOSFET, UltraFET® Trench, 100V, 44A, 28mΩ
  • Features
  • Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A
  • Typ Qg(10) = 24nC at VGS = 10V
  • Low Miller Charge
  • Low QRR Body Diode
  • Optimized efficiency at high frequencies
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • RoHS Compliant
  • Applications
  • Infotainment
  • Portable Navigation
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  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • Technical Documentation & Design Resources
    Availability and Samples
    FDD3672-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free 
  • Description: N-Channel MOSFET, UltraFET® Trench, 100V, 44A, 28mΩ
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:>1K
  • ON Semiconductor:22,500
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 44 
  • PD Max (W): 144 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 28 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 24 
  • Ciss Typ (pF): 1635 
  • Package Type: DPAK-3 / TO-252-3 
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