FDD5N60NZ: N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK

Description: UniFETTM II MOSFET is a high voltage MO...
  • UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
  • Features
  • RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.0A
  • Low gate charge ( Typ. 10nC)
  • Low Crss ( Typ. 5pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDD5N60NZTM
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:>10K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 600 
  • VGS Max (V): ±25 
  • VGS(th) Max (V):
  • ID Max (A):
  • PD Max (W): 83 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 2000 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 10 
  • Ciss Typ (pF): 450 
  • Package Type: DPAK-3 / TO-252-3 
  • ON Semiconductor Full Web Site