FDD8782: N-Channel PowerTrench® MOSFET 25V, 35A, 11mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
  • Features
  • Max rDS(on) = 11.0mΩ at VGS = 10V, ID = 35A
  • Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID= 35A
  • Low gate charge: Qg(10) = 18nC(Typ), VGS = 10V
  • Low gate resistance
  • Avalanche rated and 100% tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDD8782
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 25V, 35A, 11mΩ
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • ON Semiconductor:7,500
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 25 
  • VGS Max (V): 20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 35 
  • PD Max (W): 50 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 14 
  • RDS(on) Max @ VGS = 10 V (mΩ): 11 
  • Qg Typ @ VGS = 4.5 V (nC): 48 
  • Qg Typ @ VGS = 10 V (nC): 9.4 
  • Ciss Typ (pF): 920 
  • Package Type: DPAK-3 / TO-252-3 
  • ON Semiconductor Full Web Site