FDFMA2P029Z: Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -20V, 3.1A, 95mΩ

Description: This device is designed specifically as a single p...
  • This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.
    The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
  • Features
  • Max rDS(on) = 95mΩ at VGS = -4.5V, ID = -3.1A
  • Max rDS(on) = 141mΩ at VGS = -2.5V, ID = -2.5A
  • HBM ESD protection level > 2.5kV (Note 3)
    Schottky
  • VF < 0.37V @ 500mA
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDFMA2P029Z
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -20V, 3.1A, 95mΩ
  • Package Type: WDFN-6
  • Package Case Outline: 511DA
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Avnet:>1K
  • Digikey:>1K
  • ON Semiconductor:69,000
  • FDFMA2P029Z-F106
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Integrated P-Channel PowerTrench® MOSFET and Schottky Diode, -20V, 3.1A, 95mΩ
  • Package Type: WDFN-6
  • Package Case Outline: 511DA
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • ON Semiconductor:255,000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: with Schottky Diode 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V): 12 
  • VGS(th) Max (V): -1.5 
  • ID Max (A): -3.1 
  • PD Max (W): 1.4 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 141 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 95 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 540 
  • Package Type: WDFN-6 
  • ON Semiconductor Full Web Site