FDG6301N: Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω
Description: These dual N-Channel logic level enhancement mode ...
These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
25 V, 0.22 A continuous, 0.65 A Peak.
RDS(ON) = 4 Ω @ VGS= 4.5 V,
RDS(ON) = 5 Ω @ VGS= 2.7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package.
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω
Package Type: SC-88-6 / SC-70-6 / SOT-363-6
Package Case Outline: 419AD
Container Type: REEL
Container Qty: 3000
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):
SC-88-6 / SC-70-6 / SOT-363-6