FDG6306P: P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -0.6 A, 420 mΩ

Description: This P-Channel 2.5V specified MOSFET is a rugged g...
  • This P-Channel 2.5V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
  • Features
  • –0.6 A, –20 V.
  • RDS(ON)= 420 mΩ @ VGS = –4.5 V
  • RDS(ON) = 630 mΩ @ VGS = –2.5 V
  • Low gate charge
  • High performance trench technology for extremelylow RDS(ON)
  • Compact industry standard SC70-6 surface mountpackage
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDG6306P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -0.6 A, 420 mΩ
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6
  • Package Case Outline: 419AD
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V): 12 
  • VGS(th) Max (V): -1.5 
  • ID Max (A): -0.6 
  • PD Max (W): 0.3 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): Q1=Q2=630 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=420 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 1.7 
  • Qg Typ @ VGS = 10 V (nC): 1.4 
  • Ciss Typ (pF): 114 
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6 
  • ON Semiconductor Full Web Site