FDG6320C: Dual N & P Channel Digital FET 25V
Description: These dual N & P-Channel logic level enhancement m...
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
N-Ch 0.22 A, 25 V,
RDS(ON) = 4.0 Ω @ VGS= 4.5 V,
RDS(ON) = 5.0 Ω @ VGS= 2.7 V.
P-Ch -0.14 A, -25 V,
RDS(ON) = 10 Ω @ VGS= -4.5 V,
RDS(ON) = 13 Ω @ VGS= -2.7 V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: Dual N & P Channel Digital FET 25V
Package Type: SC-88-6 / SC-70-6 / SOT-363-6
Package Case Outline: 419AD
Container Type: REEL
Container Qty: 3000
Market Leadtime (weeks):Contact Factory
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
N: 0.22, P: -0.14
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
N: 4000, P:10000
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):
SC-88-6 / SC-70-6 / SOT-363-6