MOSFETs

FDI045N10A: N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ

Description: This N-Channel MOSFET is produced using an advance...
  • This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
    • Features
  • RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A
  • Fast Switching Speed
  • Low Gate Charge, QG = 54nC ( Typ.)
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS Compliant
    • Applications
  • AC-DC Merchant Power Supply
  • AC-DC Merchant Power Supply - Servers & Workstations
  • AC-DC Merchant Power Supply - Desktop PC
  • Uninterruptible Power Supply
  • Other Data Processing
  • Electric Bike
    • Technical Documentation & Design Resources
    Availability and Samples
    FDI045N10A-F102
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ
  • Package Type: I2PAK-3 / D2PAK-3 STRAIGHT LEAD
  • Package Case Outline: 418AV
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
    • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 4 
  • ID Max (A): 164 
  • PD Max (W): 263 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): - 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): - 
  • RDS(on) Max @ VGS = 10 V (mΩ): 4.5 
  • Qg Typ @ VGS = 4.5 V (nC): - 
  • Qg Typ @ VGS = 10 V (nC): 57 
  • Ciss Typ (pF): 3960 
  • Package Type: I2PAK-3 / D2PAK-3 STRAIGHT LEAD 

    • ON Semiconductor Full Web Site