FDMC2674: N-Channel Trench MOSFET, UltraFET, 220V, 7.0A, 366mΩ

Description: UltraFET® device combine characteristic...
  • UltraFET® device combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
  • Features
  • Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A
  • Typ Qg = 12.7nC at VGS = 10V
  • Low Miller charge
  • Low Qrr Body Diode
  • Optimized efficiency at high frequencies
  • UIS Capability ( Single Pulse andRepetitive Pulse)
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC2674
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Trench MOSFET, UltraFET, 220V, 7.0A, 366mΩ
  • Package Type: WDFN-8
  • Package Case Outline: 511DH
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>10K
  • ON Semiconductor:12,000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 20 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A):
  • PD Max (W): 42 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 366 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 12.7 
  • Ciss Typ (pF): 880 
  • Package Type: WDFN-8 
  • ON Semiconductor Full Web Site