FDMC7572S: N-Channel Power Trench® SyncFET™ 25V, 40A, 3.15mΩ

Description: The FDMC7572S has been designed to minimize losses...
  • The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
  • Features
  • Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A
  • Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
  • Advanced Package and Combination for low rDS(on) and high efficiency
  • SyncFET Schottky Body Diode
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC7572S
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power Trench® SyncFET™ 25V, 40A, 3.15mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AK
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Newark:>1K
  • ON Semiconductor:21,000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 20 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 40 
  • PD Max (W): 52 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 4.7 
  • RDS(on) Max @ VGS = 10 V (mΩ): 3.15 
  • Qg Typ @ VGS = 4.5 V (nC): 24 
  • Qg Typ @ VGS = 10 V (nC): 14 
  • Ciss Typ (pF): 2031 
  • Package Type: PQFN-8 
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