FDMC86262P: P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ

Description: This P-Channel MOSFET is produced using an advance...
  • This P-Channel MOSFET is produced using an advanced PowerTrench® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching performance.
  • Features
  • Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A
  • Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A
  • Very Low rDS(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg
  • Optimised for Fast Switching Applications as well as Load Switch Applications
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • Industrial
  • Portable and Wireless
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC86262P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ
  • Package Type: WDFN-8
  • Package Case Outline: 511DH
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>50K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -150 
  • VGS Max (V): ±25 
  • VGS(th) Max (V): -4 
  • ID Max (A): -2 
  • PD Max (W): 40 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 307 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 5.6 
  • Ciss Typ (pF): 632 
  • Package Type: WDFN-8 
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