MOSFETs

FDMD85100: Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ

Description: This device includes two 100V N-Channel MOSFETs in...
  • This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
    • Features
  • Q1: N-Channel
    Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A
    Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A
  • Q2: N-Channel
    Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A
    Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A
  • Ideal for flexible layout in primary side of bridge topology
  • Termination is Lead-free and RoHS Compliant
  • 100% UIL tested
  • Kelvin High Side MOSFET drive pin-out capability
    • Applications
  • This product is general usage and suitable for many different applications.
    • Technical Documentation & Design Resources
    Availability and Samples
    FDMD85100
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AT
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000

    • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Digikey:>1K
    • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 4 
  • ID Max (A): Q1=Q2: 48.0 
  • PD Max (W): 50 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): - 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): - 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=9.9 
  • Qg Typ @ VGS = 4.5 V (nC): 9.2 
  • Qg Typ @ VGS = 10 V (nC): 13.5 
  • Ciss Typ (pF): Q1=1590, Q2:1485 
  • Package Type: PQFN-8 

    • ON Semiconductor Full Web Site