FDMD86100: Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 39A, 10.5mΩ

Description: This package integrates two N-Channel devices conn...
  • This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
  • Features
  • Common source configuration to eliminate PCB routing
  • Large source pad on bottom of package for enhanced thermals
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A
  • Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A
  • Ideal for flexible layout in secondary side synchronous rectification
  • Termination is Lead-free and RoHS Compliant
  • 100% UIL tested
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMD86100
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 39A, 10.5mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 80 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 39 
  • PD Max (W): 33 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=10.5 
  • Qg Typ @ VGS = 4.5 V (nC): 16 
  • Qg Typ @ VGS = 10 V (nC): 13 
  • Ciss Typ (pF): 1469 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site